SEMICONDUCTOR LASER AND OPTICAL MODULE PROVIDED WITH SAME, OPTICAL COMMUNICATION DEVICE, AND OPTICAL COMMUNICATION SYSTEM

摘要

The present invention relates to a semiconductor laser comprising: an active layer (18) having a band gap energy less than the band gap energy of GaAs in at least a portion thereof, the active layer (18) being provided on a substrate (10); GaAs layers (a GaAs waveguide layer (20) and a diffraction grating layer (22)) provided on the active layer (18) as waveguides for propagating light which oscillates from the active layer (18); a diffraction grating (26) provided to the upper surface of the diffraction grating layer (22); an embedding layer (24) provided so as to embed the diffraction grating (26); and a carrier stop layer (34) for suppressing carrier overflow from the active layer (18) to the boundary of the diffraction grating layer (22) and the embedding layer (24), the carrier stop layer (34) being provided between the active layer (18) and the diffraction grating (26).