摘要 |
<P>PROBLEM TO BE SOLVED: To provide a deposition technique for depositing an oxide semiconductor film and a method for manufacturing a highly reliable semiconductor element using the oxide semiconductor film. <P>SOLUTION: A novel sputtering target obtained by removing an alkali metal, an alkaline earth metal, and hydrogen that are impurities in a sputtering target used for deposition is used, whereby an oxide semiconductor film containing a small amount of those impurities can be deposited. <P>COPYRIGHT: (C)2012,JPO&INPIT |