发明名称 SPUTTERING TARGET AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a deposition technique for depositing an oxide semiconductor film and a method for manufacturing a highly reliable semiconductor element using the oxide semiconductor film. <P>SOLUTION: A novel sputtering target obtained by removing an alkali metal, an alkaline earth metal, and hydrogen that are impurities in a sputtering target used for deposition is used, whereby an oxide semiconductor film containing a small amount of those impurities can be deposited. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012072493(A) 申请公布日期 2012.04.12
申请号 JP20110187729 申请日期 2011.08.30
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI
分类号 C23C14/34;C04B35/00;C04B35/453;H01L21/203;H01L21/336;H01L29/786 主分类号 C23C14/34
代理机构 代理人
主权项
地址