发明名称 VERTICAL HEAT TREATMENT DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To realize reduction in a device cost, as well as an effective utilization of a treatment gas when performing a heat treatment in a reaction tube by supplying the treatment gas from the lateral side to each of a plurality of substrates placed on a wafer boat in a shelf form. <P>SOLUTION: A plurality of substrate placing regions 33 are arranged in the circumferential direction on each upper surface side of holding plates 31. These holding plates 31 are held by poles 32 from the peripheral edge side in the circumferential direction at a plurality of positions. Each pole 32 is arranged at a position inward the outer peripheral of the holding plate 31 in such a manner that a gap size t between the outer peripheral of the holding plate 31 and the inner wall of an inner cylinder 12b becomes smaller than a gap size k between the upper surface of a wafer W held on the holding plate 31 and the lower surface of the holding plate 31 opposing from above to the wafer W. Then the treatment gas is supplied to each wafer W from gas discharge ports 52 arranged at each lateral side of the wafer W. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012074618(A) 申请公布日期 2012.04.12
申请号 JP20100219726 申请日期 2010.09.29
申请人 TOKYO ELECTRON LTD 发明人 MOROZUMI YUICHIRO;SATO IZUMI
分类号 H01L21/31;C23C16/455;H01L21/205 主分类号 H01L21/31
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