| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a wiring formation method capable of maintaining high adhesion between a lower wiring layer and a wiring seed layer without decreasing the adhesion. <P>SOLUTION: A wiring formation method for forming an upper wiring layer and a communicating wiring layer 16 in a target body in which a lower wiring layer 4, an insulating barrier layer 6, an interlayer insulating film 8, and an upper wiring layer are sequentially stacked comprises: a pre-processing step of forming a communicating hole 9B in a state in which the insulating barrier layer remains, embedding a sacrifice film in the communicating hole, and forming a pattern mask 62 which forms a trench 9A; a trench formation step of forming a trench; an ashing step of ashing the sacrifice film 60 and the pattern mask; a barrier layer formation step of forming a barrier layer 10 in the trench and the communicating hole by heat treatment; an anisotropic etching step of removing the barrier layer and the insulating barrier layer of a bottom portion of the communicating hole by means of anisotropic etching; and a wiring seed layer formation step of forming a wiring seed layer 12. <P>COPYRIGHT: (C)2012,JPO&INPIT |
