发明名称 |
GROUP III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR DEVICE |
摘要 |
A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device includes a group III nitride semiconductor supporting base, a GaN based semiconductor region, an active layer, and a GaN semiconductor region. The primary surface of the group III nitride semiconductor supporting base is not any polar plane, and forms a finite angle with a reference plane that is orthogonal to a reference axis extending in the direction of a c-axis of the group III nitride semiconductor. The GaN based semiconductor region, grown on the semipolar primary surface, includes a semiconductor layer of, for example, an n-type GaN based semiconductor doped with silicon. A GaN based semiconductor layer of an oxygen concentration of 5×1016 cm−3 or more provides an active layer, grown on the primary surface, with an excellent crystal quality.
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申请公布号 |
US2012086015(A1) |
申请公布日期 |
2012.04.12 |
申请号 |
US201113243516 |
申请日期 |
2011.09.23 |
申请人 |
KYONO TAKASHI;YOSHIZUMI YUSUKE;ENYA YOHEI;AKITA KATSUSHI;UENO MASAKI;SUMITOMO TAKAMICHI;NAKAMURA TAKAO;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
KYONO TAKASHI;YOSHIZUMI YUSUKE;ENYA YOHEI;AKITA KATSUSHI;UENO MASAKI;SUMITOMO TAKAMICHI;NAKAMURA TAKAO |
分类号 |
H01L29/20;B82Y10/00;B82Y20/00;B82Y40/00;H01L21/205;H01L33/06;H01L33/32;H01S5/343 |
主分类号 |
H01L29/20 |
代理机构 |
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