| 摘要 |
PURPOSE: A method for crystallizing an amorphous silicon using SILC and a method for fabricating a polycrystalline silicon thin film transistor using the same are provided to improve productivity by performing a compressing process of contracting an insulating substrate. CONSTITUTION: A method for crystallizing an amorphous silicon using SILC and a method for fabricating a polycrystalline silicon thin film transistor using the same are comprised of the steps: forming an amorphous silicon on a transparent insulating substrate(11); crystallizing the amorphous silicon as the poly-crystal silicon while performing the compression process of contracting the insulating substrate; and forming an active layer by patterning amorphous silicon.
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