发明名称 ION SOURCE, SYSTEM AND METHOD
摘要 <P>PROBLEM TO BE SOLVED: To achieve an ion beam with a spot size of 10 nm or less on a sample surface in an ion microscope using a gas field ion source. <P>SOLUTION: A material and shape of a conductive electrode tip 186 of an ion source is optimized so that an atomic layer of a trimer is formed on a tip surface, and the ion source is operated in ultralow temperature conditions. Thereby, ionization efficiency with vaporized helium is improved. A spot of 10 nm or less on a sample 180 can be achieved by selecting a movement mechanism 208 for the electrode tip and a diameter 224 of an aperture opening to control a beam diameter and current amount. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012074383(A) 申请公布日期 2012.04.12
申请号 JP20110232869 申请日期 2011.10.24
申请人 ARISU CORPORATION:KK 发明人 BILLY W WARD;JOHN A NOTTE IV;LEWIS S FALKUS III;RANDOLPH G PERCIVAL;RAYMOND HILL;ALEXANDER GROKHOLSKY;RICHARD COMUNALE
分类号 H01J37/26;H01J27/26;H01J37/08;H01J37/09;H01J37/28 主分类号 H01J37/26
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