发明名称 |
ION SOURCE, SYSTEM AND METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To achieve an ion beam with a spot size of 10 nm or less on a sample surface in an ion microscope using a gas field ion source. <P>SOLUTION: A material and shape of a conductive electrode tip 186 of an ion source is optimized so that an atomic layer of a trimer is formed on a tip surface, and the ion source is operated in ultralow temperature conditions. Thereby, ionization efficiency with vaporized helium is improved. A spot of 10 nm or less on a sample 180 can be achieved by selecting a movement mechanism 208 for the electrode tip and a diameter 224 of an aperture opening to control a beam diameter and current amount. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012074383(A) |
申请公布日期 |
2012.04.12 |
申请号 |
JP20110232869 |
申请日期 |
2011.10.24 |
申请人 |
ARISU CORPORATION:KK |
发明人 |
BILLY W WARD;JOHN A NOTTE IV;LEWIS S FALKUS III;RANDOLPH G PERCIVAL;RAYMOND HILL;ALEXANDER GROKHOLSKY;RICHARD COMUNALE |
分类号 |
H01J37/26;H01J27/26;H01J37/08;H01J37/09;H01J37/28 |
主分类号 |
H01J37/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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