SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To realize a semiconductor device that has a bypass capacitor with high capacity density which ensures a desired capacity with a small occupied area, and that has excellent insulation breakdown resistance and eliminates a concern in reliability without increasing the number of processes of manufacturing a semiconductor device.

SOLUTION: In a bypass capacitor, a first capacity insulation film is formed of a first insulation film 23 together with a tunnel insulation film of a storage element. A first electrode 26 as a lower electrode is formed of a (crystallized) doped amorphous silicon film 24 together with a floating gate electrode 25 of the storage element. A second capacity insulation film is formed of a second insulation film 33 together with a gate insulation film of a transistor of 5 V in a peripheral circuit. A second electrode 37 as an upper electrode is formed of a polycrystalline silicon film 34 together with a control gate electrode 36 of the storage element and a gate electrode 41 of the transistor in the peripheral circuit.

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