| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a nitride semiconductor substrate, by which the surface quality of a ground substrate is made uniform and thereby, the yield and quality of a grown nitride thick film are improved. <P>SOLUTION: The nitride semiconductor substrate is used for epitaxial growth of a semiconductor device. The method for producing the nitride semiconductor substrate 40 includes: forming a metal film layer (or a carbonized film layer) 3 on a ground substrate 10 in which a first layer 2 composed of a nitride semiconductor is provided on a base material 1; then nitriding the metal film layer (or the carbonized film layer) 3; subjecting the nitrided layer 3 to a surface oxidation treatment; growing a second layer 5 composed of a nitride semiconductor; and thereafter, peeling the second layer 5 from the base material 1. <P>COPYRIGHT: (C)2012,JPO&INPIT |
