METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND FOR PROCESSING SUBSTRATE, AND SUBSTRATE PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that manufactures a film having a good uniformity between batches in the concentration and the growth rate of a doped element.

SOLUTION: The method comprises a step for processing a product substrate; a step for performing at least one or more cycles including supplying inactive gas to a reactor and exhausting gas from the reactor in a condition that the product substrate after process, is housed, to change a pressure in the reactor and perform a first purge in the reactor; and a step for performing at least one or more cycles including supplying the inactive gas to the reactor and exhausting gas from the reactor in a condition that the product substrate after process, is removed from the reactor, to change a pressure in the reactor and perform a second purge in the reactor. A pressure change amount in the reactor during the second purge is set larger than that during the first purge.

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