发明名称 |
HETEROGENEOUS SUBSTRATE, NITRIDE-BASED SEMICONDUCTOR DEVICE USING SAME, AND MANUFACTURING METHOD THEREOF |
摘要 |
Provided are a heterogeneous substrate, a nitride-based semiconductor device using the same, and a manufacturing method thereof to form a high-quality non-polar or semi-polar nitride layer on a non-polar or semi-polar plane of the heterogeneous substrate by adjusting a crystal growth mode. A base substrate having one of a non-polar plane and a semi-polar plane is prepared, and a nitride-based nucleation layer is formed on the plane of the base substrate. A first buffer layer is grown faster in the vertical direction than in the lateral direction on the nucleation layer. A lateral growth layer is grown faster in the lateral direction than in the vertical direction on the first buffer layer. A second buffer layer is formed on the lateral growth layer. A silicon nitride layer having a plurality of holes may be formed between the lateral growth layer on the first buffer layer and the second buffer layer. |
申请公布号 |
US2012086017(A1) |
申请公布日期 |
2012.04.12 |
申请号 |
US201113327647 |
申请日期 |
2011.12.15 |
申请人 |
HWANG SUNG MIN;BAIK KWANG HYEON;SEO YONG GON;YOON HYUNG DO;PARK JAE HYOUN;KOREA ELECTRONICS TECHNOLOGY INSTITUTE |
发明人 |
HWANG SUNG MIN;BAIK KWANG HYEON;SEO YONG GON;YOON HYUNG DO;PARK JAE HYOUN |
分类号 |
H01L29/22;H01L21/20;H01L29/06 |
主分类号 |
H01L29/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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