发明名称 |
TRANSISTORS AND ELECTRONIC DEVICES INCLUDING THE SAME |
摘要 |
Example embodiments disclose transistors and electronic devices including the transistors. A transistor may include a charge blocking layer between a gate insulating layer and a gate. An energy barrier between the gate insulating layer and the gate may be increased by the charge blocking layer. The transistor may be an oxide transistor including a channel layer formed of an oxide semiconductor.
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申请公布号 |
US2012085998(A1) |
申请公布日期 |
2012.04.12 |
申请号 |
US201113096314 |
申请日期 |
2011.04.28 |
申请人 |
KWON DAE-WOONG;PARK JAE-CHUL;PARK BYUNG-GOOK;KIM SANG-WAN;KIM JANG-HYUN;CHANG JI-SOO |
发明人 |
KWON DAE-WOONG;PARK JAE-CHUL;PARK BYUNG-GOOK;KIM SANG-WAN;KIM JANG-HYUN;CHANG JI-SOO |
分类号 |
H01L29/772 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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