发明名称 TRANSISTORS AND ELECTRONIC DEVICES INCLUDING THE SAME
摘要 Example embodiments disclose transistors and electronic devices including the transistors. A transistor may include a charge blocking layer between a gate insulating layer and a gate. An energy barrier between the gate insulating layer and the gate may be increased by the charge blocking layer. The transistor may be an oxide transistor including a channel layer formed of an oxide semiconductor.
申请公布号 US2012085998(A1) 申请公布日期 2012.04.12
申请号 US201113096314 申请日期 2011.04.28
申请人 KWON DAE-WOONG;PARK JAE-CHUL;PARK BYUNG-GOOK;KIM SANG-WAN;KIM JANG-HYUN;CHANG JI-SOO 发明人 KWON DAE-WOONG;PARK JAE-CHUL;PARK BYUNG-GOOK;KIM SANG-WAN;KIM JANG-HYUN;CHANG JI-SOO
分类号 H01L29/772 主分类号 H01L29/772
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