发明名称 |
Transistors, Methods Of Manufacturing The Same, And Electronic Devices Including Transistors |
摘要 |
Example embodiments disclose transistors, methods of manufacturing the same, and electronic devices including transistors. An active layer of a transistor may include a plurality of material layers (oxide layers) with different energy band gaps. The active layer may include a channel layer and a photo sensing layer. The photo sensing layer may have a single-layered or multi-layered structure. When the photo sensing layer has a multi-layered structure, the photo sensing layer may include a first material layer and a second material layer that are sequentially stacked on a surface of the channel layer. The first layer and the second layer may be alternately stacked one or more times.
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申请公布号 |
US2012085999(A1) |
申请公布日期 |
2012.04.12 |
申请号 |
US201113099806 |
申请日期 |
2011.05.03 |
申请人 |
SONG I-HUN;HUAXIANG YIN;JEON SANG-HUN;PARK SUNG-HO;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SONG I-HUN;HUAXIANG YIN;JEON SANG-HUN;PARK SUNG-HO |
分类号 |
H01L29/12;H01L31/113 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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