发明名称 |
CHIP LEVEL EMI SHIELDING STRUCTURE AND MANUFACTURE METHOD THEREOF |
摘要 |
A chip level EMI shielding structure and manufacture method thereof are provided. The chip level EMI shielding structure includes a semiconductor substrate, at least one ground conductor line, a ground layer, and a connection structure. The ground conductor line is disposed on a first surface of the semiconductor substrate, and the ground layer is disposed on a second surface of the semiconductor substrate. The connection structure is formed on a lateral wall of the semiconductor substrate for connecting the ground conductor lines with the ground layer to form a shielding. With such arrangement, the chip level EMI shielding structure can reduce the chip size and the manufacturing cost. |
申请公布号 |
US2012086108(A1) |
申请公布日期 |
2012.04.12 |
申请号 |
US201113053528 |
申请日期 |
2011.03.22 |
申请人 |
WU MING-CHE;UNIVERSAL GLOBAL SCIENTIFIC INDUSTRIAL CO., LTD.;UNIVERSAL SCIENTIFIC INDUSTRIAL (SHANGHAI) CO., LTD. |
发明人 |
WU MING-CHE |
分类号 |
H01L23/552;H01L21/56;H01L21/78 |
主分类号 |
H01L23/552 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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