| 摘要 |
<p>A semiconductor device includes a semiconductor substrate (1) on which a structure portion (3) is provided except a peripheral portion thereof, and has a laminated structure including low dielectric films (4) and wiring lines (5), the low dielectric films having a relative dielectric constant of 3.0 or lower and a glass transition temperature of 400°C or higher. An insulating film (9) is formed on the structure portion (3). A connection pad portion is arranged on the insulating film (9) and connected to an uppermost wiring line (5) of the laminated structure portion (3). A bump electrode (13) is provided on the connection pad portion. A sealing film (14) made of an organic resin is provided on a part of the insulating film (9) which surrounds the bump electrode (13). Side surfaces of the laminated structure portion (3) are covered with the insulating film (9) and/or the sealing film (14).</p> |
