Cu-Ga ALLOY SPUTTERING TARGET AND METHOD FOR MANUFACTURING Cu-Ga ALLOY SPUTTERING TARGET

摘要

PROBLEM TO BE SOLVED: To provide a high quality Cu-Ga alloy sputtering target prepared by a powder sintering method, in which generation of particles in a sputtered film is suppressed even when high sputtering power is applied.

SOLUTION: Mixed powder including Cu powder and Ga mixed at a mass ratio of 85:15 to 55:45 is alloyed by heating and stirring it in an inert atmosphere to obtain Cu-Ga alloy powder having an average particle size of ≤150 μm. The resulting Cu-Ga alloy powder is subjected to hot press sintering, whereby a Cu-Ga alloy sputtering target having a cross sectional structure containing particles each having an average crystal particle diameter of ≤40 μm is manufactured.

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