发明名称 METHOD OF MANUFACTURING Cu-Ga ALLOY SPUTTERING TARGET AND THE Cu-Ga ALLOY SPUTTERING TARGET
摘要 <P>PROBLEM TO BE SOLVED: To manufacture a high-quality Cu-Ga alloy sputtering target. <P>SOLUTION: Cu-Ga alloy powder obtained by alloying a powder mixture of Cu powder and Ga powder blended by the mass proportion of 85:15-55:45 at a temperature of 30-400&deg;C under an inert atmosphere is heat-treated at a temperature of 400-900&deg;C under a vacuum or the inert atmosphere, and then pressurized and sintered. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012072466(A) 申请公布日期 2012.04.12
申请号 JP20100219415 申请日期 2010.09.29
申请人 SUMITOMO METAL MINING CO LTD 发明人 TAKAGI MASANORI;SATO ERIKO;ANDO ISAO;MINAMI HIRONAO
分类号 C23C14/34;B22F1/00;B22F3/14;C22C9/00 主分类号 C23C14/34
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