发明名称 |
METHOD OF MANUFACTURING Cu-Ga ALLOY SPUTTERING TARGET AND THE Cu-Ga ALLOY SPUTTERING TARGET |
摘要 |
<P>PROBLEM TO BE SOLVED: To manufacture a high-quality Cu-Ga alloy sputtering target. <P>SOLUTION: Cu-Ga alloy powder obtained by alloying a powder mixture of Cu powder and Ga powder blended by the mass proportion of 85:15-55:45 at a temperature of 30-400°C under an inert atmosphere is heat-treated at a temperature of 400-900°C under a vacuum or the inert atmosphere, and then pressurized and sintered. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012072466(A) |
申请公布日期 |
2012.04.12 |
申请号 |
JP20100219415 |
申请日期 |
2010.09.29 |
申请人 |
SUMITOMO METAL MINING CO LTD |
发明人 |
TAKAGI MASANORI;SATO ERIKO;ANDO ISAO;MINAMI HIRONAO |
分类号 |
C23C14/34;B22F1/00;B22F3/14;C22C9/00 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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