发明名称 |
Semiconductor Device Having Glue Layer And Supporter |
摘要 |
A plurality of metal patterns are disposed on a substrate. A support structure is provided between the plurality of metal patterns. The support structure has a supporter and a glue layer. Each of the plurality of metal patterns has a greater vertical length than a horizontal length on the substrate when viewed from a cross-sectional view. The supporter has a band gap energy of at least 4.5eV. The glue layer is in contact with the plurality of metal patterns. The supporter and the glue layer are formed of different materials.
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申请公布号 |
US2012086014(A1) |
申请公布日期 |
2012.04.12 |
申请号 |
US201113182916 |
申请日期 |
2011.07.14 |
申请人 |
KIM WAN-DON;KIM BEOM-SEOK;TAK YONG-SUK;CHO KYU-HO;LEE SEUNG-HWAN;KWON OH-SEONG;CHOI GEUN-KYU;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM WAN-DON;KIM BEOM-SEOK;TAK YONG-SUK;CHO KYU-HO;LEE SEUNG-HWAN;KWON OH-SEONG;CHOI GEUN-KYU |
分类号 |
H01L29/12;H01L23/48 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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地址 |
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