发明名称 |
SEMICONDUCTOR DEVICE AND STRUCTURE |
摘要 |
A method of manufacturing a semiconductor wafer, the method comprising: providing a base wafer comprising a semiconductor substrate; preparing a first monocrystalline layer comprising semiconductor regions; preparing a second monocrystalline layer comprising semiconductor regions overlying the first monocrystalline layer; and etching portions of said first monocrystalline layer and portions of said second monocrystalline layer as part of forming at least one transistor on said first monocrystalline layer. |
申请公布号 |
US2012088367(A1) |
申请公布日期 |
2012.04.12 |
申请号 |
US201113218815 |
申请日期 |
2011.08.26 |
申请人 |
SEKAR DEEPAK C.;OR-BACH ZVI;MONOLITHLC 3D INC. |
发明人 |
SEKAR DEEPAK C.;OR-BACH ZVI |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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