发明名称 SEMICONDUCTOR DEVICE AND STRUCTURE
摘要 A method of manufacturing a semiconductor wafer, the method comprising: providing a base wafer comprising a semiconductor substrate; preparing a first monocrystalline layer comprising semiconductor regions; preparing a second monocrystalline layer comprising semiconductor regions overlying the first monocrystalline layer; and etching portions of said first monocrystalline layer and portions of said second monocrystalline layer as part of forming at least one transistor on said first monocrystalline layer.
申请公布号 US2012088367(A1) 申请公布日期 2012.04.12
申请号 US201113218815 申请日期 2011.08.26
申请人 SEKAR DEEPAK C.;OR-BACH ZVI;MONOLITHLC 3D INC. 发明人 SEKAR DEEPAK C.;OR-BACH ZVI
分类号 H01L21/302 主分类号 H01L21/302
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