发明名称 |
ENGINEERING MULTIPLE THRESHOLD VOLTAGES IN AN INTEGRATED CIRCUIT |
摘要 |
An integrated circuit and method for forming an integrated circuit. There are at least three field-effect transistors with at least two of the field-effect transistors having the same electrically insulating material which is ferroelectric when unstrained or is capable of being ferroelectric when strain is induced. It is optional for the third field-effect transistor to have an electrically insulating material which is ferroelectric when unstrained or is capable of being ferroelectric when strain is induced. The at least three field-effect transistors are strained to varying amounts so that each of the three field-effect transistors has a threshold voltage, Vt, which is different from the Vt of the two other field-effect transistors. |
申请公布号 |
US2012086059(A1) |
申请公布日期 |
2012.04.12 |
申请号 |
US20100899691 |
申请日期 |
2010.10.07 |
申请人 |
DUBOURDIEU CATHERINE ANNE;FRANK MARTIN MICHAEL;NARAYANAN VIJAY;CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DUBOURDIEU CATHERINE ANNE;FRANK MARTIN MICHAEL;NARAYANAN VIJAY |
分类号 |
H01L29/82;H01L21/00 |
主分类号 |
H01L29/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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