发明名称 ENGINEERING MULTIPLE THRESHOLD VOLTAGES IN AN INTEGRATED CIRCUIT
摘要 An integrated circuit and method for forming an integrated circuit. There are at least three field-effect transistors with at least two of the field-effect transistors having the same electrically insulating material which is ferroelectric when unstrained or is capable of being ferroelectric when strain is induced. It is optional for the third field-effect transistor to have an electrically insulating material which is ferroelectric when unstrained or is capable of being ferroelectric when strain is induced. The at least three field-effect transistors are strained to varying amounts so that each of the three field-effect transistors has a threshold voltage, Vt, which is different from the Vt of the two other field-effect transistors.
申请公布号 US2012086059(A1) 申请公布日期 2012.04.12
申请号 US20100899691 申请日期 2010.10.07
申请人 DUBOURDIEU CATHERINE ANNE;FRANK MARTIN MICHAEL;NARAYANAN VIJAY;CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 DUBOURDIEU CATHERINE ANNE;FRANK MARTIN MICHAEL;NARAYANAN VIJAY
分类号 H01L29/82;H01L21/00 主分类号 H01L29/82
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