Mehrschichtiger,loetfaehiger Halbleiteranschluss

摘要

1,173,117. Semi-conductor devices; printed circuit assemblies. INTERNATIONAL BUSINESS MACHINES CORP. 20 June, 1968 [13 July, 1967], No. 29368/68. Headings H1K and H1R. A semi-conductor device or printed circuit having a layer of a first metal in an aperture in an insulating layer is provided with a terminal structure comprising a layer of chromium deposited in the aperture and bonded to the first metal and to the insulating layer, a layer of nickel overlying and bonded to the chromium layer, and a terminal portion including solder on the nickel layer. As shown, Fig. 1, a diffused region 14 produced in a P- or N-type body 12 by diffusion using a photolithographically processed silicon dioxide mask 15 is provided with a deposited ohmic contact layer 18 of aluminium, aluminiumsilicon, platinum, palladium, chromium or molybdenum, which is covered with a layer 16 of glass in which a window is formed and layers 22, 24 and 26 of chromium, nickel, and gold, respectively, are deposited to form a laminated contact pad 20. A contact ball 30 is secured to the contact pad by a solder mass 28. Alternatively, the contact ball may be replaced by a solder mound. The chromium and nickel layers may be deposited from separate sources or by fractional distillation of a chromium-nickel alloy. The silicon dioxide layer may be produced by thermal growth or RF sputtering and a layer of alumina or silicon nitride may be used instead of silicon dioxide. In a modification, Fig. 2 (not shown), the layer of glass is formed before deposition of the ohmic contact layer (42). In a second modification, Figs. 3 and 4 (not shown), the contact layer (54) to the emitter of a transistor extends between the oxide and glass layers (15, 16) to a point remote from the active areas of the device where it is contacted by the laminated contact pad (20). In a further modification, Fig. 5 (not shown), a contact layer (64) to a diffused region extends between insulating layers to a remote point where it is contacted by a second buried layer (68) of aluminium, silver, copper, molybdenum or laminated chromium-gold-chromium, which is itself contacted by the laminated contact pad (20). In a second embodiment, Fig. 6 (not shown), a conductive band (74) on a glass or ceramic substrate (72) is covered with a layer (76) of glass and is contacted by means of a laminated contact pad (20) to which is soldered the terminal (81) of a component (80).