| 摘要 |
1,257,909. Semi-conductor devices. ITT INDUSTRIES Inc. 25 Aug., 1970 [1 Sept., 1969], No. 40820/70. Heading H1K. Unwanted conductive channels beneath a strip line 5 interconnecting the electrodes of enhancement mode IGFETs in a monolithic Si integrated circuit are prevented by the provision of a metallic layer 6 embedded in the insulating layer 7a, 7b beneath the strip line 5, the layer 6 being connected to substrate potential. Such shielding layers 6 may be provided beneath strip lines at several places in the circuit and may be connected together in a common net. The insulating layer 7a beneath the shielding layer 6 may be of SiO 2 while that, 7b, above the layer 6 may be of SiO 2 , silicon nitride or aluminium oxide. The invention is particularly applicable to (100) oriented Si but may also be used for (110) or (111) oriented material. |
