| 发明名称 |
High power AllnGaN based multi-chip light emitting diode |
| 摘要 |
A method for fabricating a light emitting diode chip, the method comprising forming the light emitting diode chip so as to have an aspect ratio which defines an elongated geometry. |
| 申请公布号 |
EP2224467(A3) |
申请公布日期 |
2012.04.11 |
| 申请号 |
EP20100161094 |
申请日期 |
2004.05.11 |
| 申请人 |
BRIDGELUX, INC. |
发明人 |
LIU, HENG |
| 分类号 |
H01L21/00;F21L4/02;H01L25/075;H01L33/20;H01L33/46;H01L33/60 |
主分类号 |
H01L21/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
