发明名称 |
SEMICONDUCTOR DEVICE, ITS MANUFACTURING METHOD, AND SPUTTERING TARGET MATERIAL FOR USE IN THE METHOD |
摘要 |
<p>A semiconductor device enables a barrier layer to fully acquire a barriering property against the diffusion of Cu from a wiring main body and the diffusion of Si from an insulating film, enhances the adhesiveness of the barrier layer and the insulating film and excels in reliability of operation over a long period of time. In this invention, a semiconductor device 1 provided on an insulating film 3 with a wiring includes the insulating film 3 containing silicon (Si), a wiring main body 8 formed of copper (Cu) in a groove-like opening 4 disposed in the insulating film 3, and a barrier layer 7 formed between the wiring main body 8 and the insulating film 3 and made of an oxide containing Cu and Si and Mn in such a manner that the atomic concentration of Cu decreases monotonously from the wiring main body 8 side toward the insulating film 3 side, the atomic concentration of Si decreases monotonously from the insulating film 3 side toward the wiring main body 8 side, and the atomic concentration of Mn is maximized in the region in which the atomic concentration of Cu and the atomic concentration of Si are approximately equal.</p> |
申请公布号 |
EP1990432(B1) |
申请公布日期 |
2012.04.11 |
申请号 |
EP20070737744 |
申请日期 |
2007.02.27 |
申请人 |
ADVANCED INTERCONNECT MATERIALS, LLC |
发明人 |
KOIKE, JUNICHI |
分类号 |
C22C9/05;C22C9/00;C22C9/02;C22C9/04;C23C14/34;H01L21/285;H01L21/3205;H01L23/52 |
主分类号 |
C22C9/05 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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