Vertical structure semiconductor light emitting device and method for manufacturing the same

摘要

The invention provides a high-quality vertical semiconductor light emitting device having fewer cracks and a manufacturing method thereof. In the vertical semiconductor light emitting device, an Si-Al alloy substrate (101) is prepared. Then a p-type group III-V compound semiconductor layer (104) is formed on the Si-Al alloy substrate. An active layer (105) is formed on the p-type group III-V compound semiconductor layer. Also, an n-type group III-V compound semiconductor layer (106) is formed on the active layer. A metal reflective layer (103) and a conductive adhesive layer (102) are formed between the Si-Al alloy substrate and the p-type semiconductor layer.