发明名称 |
Semiconductor device having a resistor and methods of forming the same |
摘要 |
In a semiconductor device and a method of making the same, the semiconductor device comprises a substrate including a first region and a second region. At least one first gate structure is on the substrate in the first region, the at least one first gate structure including a first gate insulating layer and a first gate electrode layer on the first gate insulating layer. At least one isolating structure is in the substrate in the second region, a top surface of the isolating structure being lower in height than a top surface of the substrate. At least one resistor pattern is on the at least one isolating structure. |
申请公布号 |
US8154104(B2) |
申请公布日期 |
2012.04.10 |
申请号 |
US20080077379 |
申请日期 |
2008.03.19 |
申请人 |
SHIN JINHYUN;KIM MINCHUL;CHO SEONG SOON;CHOI SEUNGWOOK;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIN JINHYUN;KIM MINCHUL;CHO SEONG SOON;CHOI SEUNGWOOK |
分类号 |
H01L27/06 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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