发明名称 Single-ended bit line based storage system
摘要 A single-ended bit line based storage system. The storage system includes a first set of storage cells, a second set of storage cells, a first set of reference storage cells, a second set of reference storage cells, and a differential sensing block. The memory core is split vertically in half vertically to form the first set of storage cells and the second set of storage cells. The first set of reference storage cells provides a discharge rate lower than the discharge rate of said first set and second set of storage cells for storing data. The second set of reference storage cells provides a discharge rate lower than the discharge rate of said first set and second set of storage cells for storing data. The differential sensing block is coupled to the first set of storage cells and the second set of storage cells for generating an output data signal on receiving a control signal.
申请公布号 US8154936(B2) 申请公布日期 2012.04.10
申请号 US20080345959 申请日期 2008.12.30
申请人 DHORI KEDAR JANARDAN;STMICROELECTRONICS PVT. LTD. 发明人 DHORI KEDAR JANARDAN
分类号 G11C7/00 主分类号 G11C7/00
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