发明名称 Flash memory device controlling common source line voltage, program-verify method, and memory system
摘要 Disclosed is a flash memory device and a program-verify method. The flash memory device includes; a plurality of memory cells connected between a bit line and a common source line, and a data input/output circuit connected to the bit line and configured to store program data for a selected one of the plurality memory cells. The data input/output circuit maintains the program data during a program-verify operation and controls a voltage level on the bit line in accordance with the program data.
申请公布号 US8154929(B2) 申请公布日期 2012.04.10
申请号 US20090481630 申请日期 2009.06.10
申请人 KANG SANG-GU;SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG SANG-GU
分类号 G11C11/34 主分类号 G11C11/34
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