发明名称 |
Flash memory device controlling common source line voltage, program-verify method, and memory system |
摘要 |
Disclosed is a flash memory device and a program-verify method. The flash memory device includes; a plurality of memory cells connected between a bit line and a common source line, and a data input/output circuit connected to the bit line and configured to store program data for a selected one of the plurality memory cells. The data input/output circuit maintains the program data during a program-verify operation and controls a voltage level on the bit line in accordance with the program data. |
申请公布号 |
US8154929(B2) |
申请公布日期 |
2012.04.10 |
申请号 |
US20090481630 |
申请日期 |
2009.06.10 |
申请人 |
KANG SANG-GU;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG SANG-GU |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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