发明名称 |
Method of manufacturing thin film transistor substrate |
摘要 |
A method of manufacturing a thin film transistor substrate includes a first process in which a gate line pattern including a gate line and a gate electrode is formed with a first conductive material on a substrate using a first mask, a second process in which a first insulating layer is formed on the substrate and a data line pattern including a data line, a source electrode, and a drain electrode is formed with a second conductive material using a second mask, and a third process in which a second insulating layer is formed on the substrate and a pixel electrode connected to the drain electrode is formed on the second insulating layer with a third conductive material. |
申请公布号 |
US8153463(B2) |
申请公布日期 |
2012.04.10 |
申请号 |
US20100729172 |
申请日期 |
2010.03.22 |
申请人 |
CHIN HONG-KEE;YEO YUNJONG;KIM SANGGAB;SONG JUNHO;LEE KYEHUN;LEE HO-JUN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHIN HONG-KEE;YEO YUNJONG;KIM SANGGAB;SONG JUNHO;LEE KYEHUN;LEE HO-JUN |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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