发明名称 Memory system
摘要 To provide a memory system which determines a memory state such as an exhaustion level and allows a memory to be efficiently used. The memory system includes a NAND type flash memory 1 in which data can be electrically written/erased, a nonvolatile memory 2 which counts the number of erase operations of the NAND type flash memory 1 and retains the number of erase operations and a maximum number of erase operations, and a controller 3 which has a connection interface 31 to be given a self-diagnosis command from a computer 4, and retrieves the number of erase operations and the maximum number of erase operations from the nonvolatile memory 2 based on the self-diagnosis command and outputs the number of erase operations and the maximum number of erase operations to the computer 4 through the connection interface 31.
申请公布号 US8156393(B2) 申请公布日期 2012.04.10
申请号 US20070513860 申请日期 2007.11.28
申请人 NAGADOMI YASUSHI;TAKASHIMA DAISABURO;HATSUDA KOSUKE;KANNO SHINICHI;KABUSHIKI KAISHA TOSHIBA 发明人 NAGADOMI YASUSHI;TAKASHIMA DAISABURO;HATSUDA KOSUKE;KANNO SHINICHI
分类号 G11C29/00 主分类号 G11C29/00
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