| 摘要 |
FIELD: electricity. ^ SUBSTANCE: piezoelectric device consists of a number of stacked layers of piezoceramic material. Each layer has two flat inner electrodes with engagement factor less than 100%; they contact in sequence with either left or right external electrodes which are located at side wall of the device. The device also contains additional uniformly distributed layers of material with high thermal conductivity, for example, aluminium nitride (AlN), beryllium oxide (BeO) or silicon carbide (SiC) or similar materials. Thickness of additional layers is not less than thickness of piezoceramic layers. Number of additional layers is determined by ratio for product of thickness, number of layers and thermal conductivity of main and additional layers. ^ EFFECT: reduction of inner temperature gradients, improvement of reliability and operating life. ^ 2 cl, 1 dwg |
