发明名称 Magnetoresistive effect element in CPP-type structure and magnetic disk device
摘要 An MR element in a CPP structure includes a spacer layer made of Cu, a magnetic pinned layer containing CoFe and a free layer containing CoFe that are laminated to sandwich the spacer layer. The free layer is located below the magnetic pinned layer. The free layer is oriented in a (001) crystal plane, the spacer layer is formed and oriented in a (001) crystal plane on the (001) crystal plane of the free layer. Therefore, in a low resistance area where an area resistivity (AR) of the MR element is, for example, lower than 0.3 &OHgr;·μm2, an MR element that has a large variation of a resistance is obtained.
申请公布号 US8154828(B2) 申请公布日期 2012.04.10
申请号 US20090500835 申请日期 2009.07.10
申请人 TSUCHIYA YOSHIHIRO;HARA SHINJI;NOGUCHI KIYOSHI;TAKAHASHI MIGAKU;TSUNODA MASAKIYO;TDK CORPORATION 发明人 TSUCHIYA YOSHIHIRO;HARA SHINJI;NOGUCHI KIYOSHI;TAKAHASHI MIGAKU;TSUNODA MASAKIYO
分类号 G11B5/39 主分类号 G11B5/39
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