发明名称 Method and system for continuous large-area scanning implantation process
摘要 A method for manufacturing doped substrates using a continuous large area scanning implantation process is disclosed. In one embodiment, the method includes providing a movable track member. The movable track member is provided in a chamber. The chamber includes an inlet and an outlet. In a specific embodiment, the movable track member can include one or more rollers, air bearings, belt member, and/or movable beam member to provide one or more substrates for a scanning process. The method may also include providing a first substrate. The first substrate includes a first plurality of tiles. The method maintains the first substrate including the first plurality of tiles in a vacuum. The method includes transferring the first substrate including the first plurality of tiles from the inlet port onto the movable track member. The first plurality of tiles are subjected to a scanning implant process. The method also includes maintaining a second substrate including a second plurality of tiles in the vacuum. The method includes transferring the second substrate including a second plurality of tiles from the inlet port onto the movable track member. The method includes subjecting the second plurality of tiles to an implant process using the scanning implant process.
申请公布号 US8153513(B2) 申请公布日期 2012.04.10
申请号 US20070782289 申请日期 2007.07.24
申请人 HENLEY FRANCOIS J.;SILICON GENESIS CORPORATION 发明人 HENLEY FRANCOIS J.
分类号 H01L21/425 主分类号 H01L21/425
代理机构 代理人
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