发明名称 Integrated flash memory systems and methods for load compensation
摘要 Systems and methods are disclosed including features that compensate for variations in the magnitude of supply voltages used in memory arrays. According to some aspects, compensation circuits may provide a tunable current-limiting load for data columns, where the load can be tuned to dynamically compensate for variations in supply voltage. In certain aspects, a compensation circuit may employ an operational amplifier configured as a voltage follower. The voltage follower compensates for any variations in supply voltage, forcing a constant voltage drop across the load element(s), thus maintaining a constant load. Other circuits may also be included, such as precharge circuits, clamp circuits, buffer circuits, trimming circuit, and sense amplifier circuits with sensed body effect. System-On-Chip integrated system aspects may include a microcontroller, a mixed IP, and a flash memory system having functionality and blocks that interface and interoperate with each other for load compensation.
申请公布号 US8154928(B2) 申请公布日期 2012.04.10
申请号 US20100947719 申请日期 2010.11.16
申请人 TRAN HIEU VAN;SILICON STORAGE TECHNOLOGY, INC. 发明人 TRAN HIEU VAN
分类号 G11C16/06 主分类号 G11C16/06
代理机构 代理人
主权项
地址