发明名称 Semiconductor device
摘要 A semiconductor device according to the present invention includes a semiconductor substrate and an MEMS sensor provided on the semiconductor substrate. The MEMS sensor includes a first electrode having a plurality of first interdigital portions aligned in a prescribed direction X at an interval, a second electrode, having a plurality of second interdigital portions aligned in the direction X at an interval, so arranged that the second interdigital portions are opposed to the first interdigital portions in the direction X respectively, a third electrode having a plurality of third interdigital portions aligned in a direction Y orthogonal the direction X at an interval, a fourth electrode, having a plurality of fourth interdigital portions aligned in the direction Y at an interval, so arranged that the fourth interdigital portions are opposed to the third interdigital portions in the direction Y respectively, and a fifth electrode opposed to the first electrode, the second electrode, the third electrode and the fourth electrode in a direction Z orthogonal to the direction X and the direction Y.
申请公布号 US8151642(B2) 申请公布日期 2012.04.10
申请号 US20080289491 申请日期 2008.10.29
申请人 NAKATANI GORO;ROHM CO., LTD. 发明人 NAKATANI GORO
分类号 G01P3/04 主分类号 G01P3/04
代理机构 代理人
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