发明名称 |
Photoelectric conversion element and manufacturing method of photoelectric conversion element |
摘要 |
An object is to provide a photoelectric conversion element having a side surface with different taper angles by conducting etching of a photoelectric conversion layer step-by-step. A pin photodiode has a high response speed compared with a pn photodiode but has a disadvantage of large dark current. One cause of the dark current is considered to be conduction through an etching residue which is generated in etching and deposited on a side surface of the photoelectric conversion layer. Leakage current of the photoelectric conversion element is reduced by forming a structure in which a side surface has two different tapered shapes, which conventionally has a uniform surface, so that the photoelectric conversion layer has a side surface of a p-layer and a side surface of an n-layer, which are not in the same plane. |
申请公布号 |
US8154096(B2) |
申请公布日期 |
2012.04.10 |
申请号 |
US20100834040 |
申请日期 |
2010.07.12 |
申请人 |
SASAGAWA SHINYA;HASEGAWA SHINYA;TAKAHASHI HIDEKAZU;ARAO TATSUYA;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
SASAGAWA SHINYA;HASEGAWA SHINYA;TAKAHASHI HIDEKAZU;ARAO TATSUYA |
分类号 |
H01L27/14;H01L31/00;H01L31/0232 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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