发明名称 |
Methods for epitaxial silicon growth |
摘要 |
Methods of cleaning substrates and growing epitaxial silicon thereon are provided. Wafers are exposed to a plasma for a sufficient time prior to epitaxial silicon growth, in order to clean the wafers. The methods exhibit enhanced selectivity and reduced lateral growth of epitaxial silicon. The wafers may have dielectric areas that are passivated by the exposure of the wafer to a plasma. |
申请公布号 |
US8152918(B2) |
申请公布日期 |
2012.04.10 |
申请号 |
US20060478401 |
申请日期 |
2006.06.29 |
申请人 |
ZHANG JINGYAN;PING ER-XUAN;MICRON TECHNOLOGY, INC. |
发明人 |
ZHANG JINGYAN;PING ER-XUAN |
分类号 |
C30B21/02;C30B23/02;C30B25/02;C30B25/18 |
主分类号 |
C30B21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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