Amorphous oxide semiconductor, semiconductor device, and thin film transistor

摘要

An amorphous oxide semiconductor contains at least one element selected from In, Ga, and Zn at an atomic ratio of InxGayZnz, wherein the density M of the amorphous oxide semiconductor is represented by the relational expression (1) below: M≧0.94×(7.121x+5.941y+5.675z)/(x+y+z)  (1) where 0≰x≰1, 0≰y≰1, 0≰z≰1, and x+y+z≠0.