| 发明名称 |
Thin film lamination, thin film magnetic sensor using the thin film lamination and method for manufacturing the thin film lamination |
| 摘要 |
Relating to a thin film lamination and a thin film magnetic sensor using the thin film lamination and a method for manufacturing the thin film lamination that realizes a thin film conducting layer having high electron mobility and sheet resistance as an InAsSb operating layer. A thin film lamination is provided which is characterized by having an AlxIn1−xSb mixed crystal layer formed on a substrate, and an InAsxSb1−x (0<x≦̸1) thin film conducting layer directly formed on the AlxIn1−xSb layer, in which the AlxIn1−xSb mixed crystal layer is a layer that exhibits higher resistance than the InAsxSb1−x thin film conducting layer or exhibits insulation or p-type conductivity, and its band gap is greater than the InAsxSb1−x thin film conducting layer, and the a lattice mismatch is +1.3% to −0.8%. |
| 申请公布号 |
US8154280(B2) |
申请公布日期 |
2012.04.10 |
| 申请号 |
US20070516538 |
申请日期 |
2007.11.29 |
| 申请人 |
SHIBASAKI ICHIRO;GEKA HIROTAKA;OKAMOTO ATSUSHI;ASAHI KASEI KABUSHIKI KAISHA |
发明人 |
SHIBASAKI ICHIRO;GEKA HIROTAKA;OKAMOTO ATSUSHI |
| 分类号 |
G01R33/02;H01L31/107 |
主分类号 |
G01R33/02 |
| 代理机构 |
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