发明名称 |
Method for fabricating memory |
摘要 |
A method for fabricating a memory is described. Word lines are provided in a first direction. Bit lines are provided in a second direction. A top electrode is formed connecting to a corresponding word line. A bottom electrode is formed connecting to a corresponding bit line. A resistive layer is formed on the bottom electrode. At least two separate L-shaped liners are formed, wherein each L-shaped liner has variable resistive materials on both ends of the L-shaped liner and each L-shaped liner is coupled between the top electrode and the resistive layer. |
申请公布号 |
US8153485(B2) |
申请公布日期 |
2012.04.10 |
申请号 |
US201113163769 |
申请日期 |
2011.06.20 |
申请人 |
LAI ERH-KUN;HO CHIA-HUA;HSIEH KUANG-YEU;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LAI ERH-KUN;HO CHIA-HUA;HSIEH KUANG-YEU |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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