发明名称 Crystal manufacturing
摘要 An implementation of a Czochralski-type crystal growth has been shown and embodied. More particularly, a furnace with suitable insulation and flow arrangement is shown to improve the cost-efficiency of production of crystals. That is achieved by the shown new hot-zone structure, gas flows and the growth process which can decrease the power consumption, increase the lifetime of hot-zone parts and improve the productivity, e.g., by giving means for opening the hot-zone and easily adapting the hot-zone to a new crystal diameter.
申请公布号 US8152921(B2) 申请公布日期 2012.04.10
申请号 US20060514177 申请日期 2006.09.01
申请人 ANTTILA OLLI;SAARNIKKO ARI;PALOHEIMO JARI;OKMETIC OYJ 发明人 ANTTILA OLLI;SAARNIKKO ARI;PALOHEIMO JARI
分类号 C30B15/04 主分类号 C30B15/04
代理机构 代理人
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