发明名称 |
Hybrid MRAM array structure and operation |
摘要 |
This invention relates to MRAM technology and new variations on MRAM array architecture to incorporate certain advantages from both cross-point and 1T-1MTJ architectures. The fast read-time and higher signal-to-noise ratio of the 1T-1MTJ architecture and the higher packing density of the cross-point architecture are both exploited by combining certain characteristics of these layouts. A single access transistor 16 is used to read the multiple MRAM cells in a segment of a column, which can be stacked vertically above one another in a plurality of MRAM array layers arranged in a “Z” axis direction. |
申请公布号 |
US8154004(B2) |
申请公布日期 |
2012.04.10 |
申请号 |
US20090614314 |
申请日期 |
2009.11.06 |
申请人 |
SEYYEDY MIRMAJID;HUSH GLEN;MICRON TECHNOLOGY, INC. |
发明人 |
SEYYEDY MIRMAJID;HUSH GLEN |
分类号 |
H01L45/00;G11C11/15 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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