发明名称 |
Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride |
摘要 |
Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g., <500° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures. |
申请公布号 |
US8153833(B2) |
申请公布日期 |
2012.04.10 |
申请号 |
US201113069217 |
申请日期 |
2011.03.22 |
申请人 |
WANG ZIYUN;XU CHONGYING;LAXMAN RAVI K.;BAUM THOMAS H.;HENDRIX BRYAN C.;ROEDER JEFFREY F.;ADVANCED TECHNOLOGY MATERIALS, INC. |
发明人 |
WANG ZIYUN;XU CHONGYING;LAXMAN RAVI K.;BAUM THOMAS H.;HENDRIX BRYAN C.;ROEDER JEFFREY F. |
分类号 |
C07C7/10;C07F7/02;C07F7/10;C07F7/12;C23C16/30;C23C16/34;C23C16/40;C30B25/02;C30B29/06;H01L21/314;H01L21/316;H01L21/318 |
主分类号 |
C07C7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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