| 摘要 |
PURPOSE: Systems and methods for forming semiconductor materials by atomic layer deposition are provided to improve the production of III-V semiconductor materials by exactly controlling each thickness and composition of III-V semiconductor materials. CONSTITUTION: A manifold(104) includes a plurality of gas columns(108) which is composed to accept one or more gases through a port(110). The gas columns are placed to be vertically arranged each other to form manifold. A work piece substrate(112) is transferred through a space between an assembly(106) and the gas columns. Gas sources(114A,114B,114C,114D) supplies gases to gas ejectors(102A,102B,102C,102D). The gas sources include an external source of an III group element or a Vgroup element. |
