VOID DETECTION FABRICATING OF PHASE CHANGE RANDOM ACCESS MEMORY

摘要

PURPOSE: A void detection method of a phase change memory device is provided to easily detect a void generated in a phase change device, thereby improving operation speed of the phase change memory device. CONSTITUTION: A junction word line(110) is formed by injecting impurities on the front surface of a semiconductor substrate(100) with a predetermined depth. A plurality of switching devices(135) is arranged on the semiconductor substrate. An ohmic contact layer(136) is selectively formed on the upper part of the switching device. A gap-fill layer(145) is formed on the front surface of the semiconductor substrate in which a spacer(140) is formed. A phase change material layer is buried in the front surface of the semiconductor substrate in which the gap-fill layer is formed.