发明名称 PLASMA PROCESS APPARATUS
摘要 A plasma process apparatus that utilizes plasma so as to perform a predetermined process on a substrate, and includes a process chamber that houses a substrate subjected to the predetermined plasma process; a microwave generator; a dielectric window attached to the process chamber and provided with a concave portion provided at an outer surface of the dielectric window opposite to the process chamber and a through hole penetrating the dielectric window to the process chamber; a microwave transmission line; and a first process gas supplying portion including a gas conduit including a first portion provided at a front end and a second portion having a larger diameter than the first portion, the gas conduit being inserted from outside of the process chamber such that the first portion is inserted in the through hole and the second portion is inserted in the concave portion.
申请公布号 KR20120034117(A) 申请公布日期 2012.04.09
申请号 KR20127003140 申请日期 2008.03.28
申请人 TOKYO ELECTRON LIMITED 发明人 IWASAKI MASAHIDE
分类号 H01L21/205;H01L21/3065;H05H1/46 主分类号 H01L21/205
代理机构 代理人
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