| 摘要 |
PURPOSE: An UMOS(U-shaped trench MOSFET(Metal-Oxide Semiconductor Field Effect Transistor)) semiconductor devices formed by low temperature processing is provided to omit a high temperature process which is used for source activation and a drive-in process by forming a source area before a gate structure is formed. CONSTITUTION: A semiconductor substrate(25) is doped into high concentration with a first conductive dopant. An epitaxial layer(30) is doped into low concentration with the first conductive dopant. A gate structure includes a conductive gate(40) and a gate insulator(35). The gate structure is formed in a trench and connected to a gate(45). A p-type well region(50) doped into high concentration is formed on an upper portion of the epitaxial layer.
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