发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, AND METHOD FOR DELETING DATA FROM THE SAME |
摘要 |
PURPOSE: A nonvolatile semiconductor memory device and a method for deleting data from the same are provided to reduce manufacturing costs without having a process of separating a P well part from a logic part and a memory cell since the data about a non-volatile memory device is removed from NAND type cells one by one. CONSTITUTION: An underlying insulation film(12) is formed on a substrate(10) having an insulating surface. A semiconductor film(14) is formed on the underlying insulation film. A first insulating layer(16) is formed on the semiconductor film. A floating gate(20) is formed on the first insulating layer. A second insulating layer(22) is formed on the floating gate. A control gate(24) is formed on the second insulating layer.
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申请公布号 |
KR20120034096(A) |
申请公布日期 |
2012.04.09 |
申请号 |
KR20120028144 |
申请日期 |
2012.03.20 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OSAME MITSUAKI;MIYAKE HIROYUKI;MIYAZAKI AYA;YAMAZAKI SHUNPEI |
分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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