发明名称 NON-VOLITILE MEMORY DEVICE FOR IMPROVING AREA EFFICIENCY
摘要 PURPOSE: A nonvolatile memory device with improved area efficiency is provided to improve operation efficiency by increasing the number of bits which are operated without the increase of an area. CONSTITUTION: A plurality of sub banks are distributed in different positions of a logical bank and a plurality of logical unit cell blocks. A unit cell block of a bank(100) includes a first sub block(112) and a second sub block(122). The sum of the unit cells controlled by the sub cell blocks is equal to the sum of the unit cells controlled by the logical unit cell block. If the corresponding bank is activated, sub cell blocks are simultaneously activated.
申请公布号 KR20120033896(A) 申请公布日期 2012.04.09
申请号 KR20100095640 申请日期 2010.09.30
申请人 SK HYNIX INC. 发明人 BAE, JI HYAE;PARK, KYOUNG WOOK
分类号 G11C13/02;G11C16/06 主分类号 G11C13/02
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