| 摘要 |
PURPOSE: A semiconductor device which has a multilayer wiring structure and a manufacturing method thereof are provided to laminate the multilayer wiring structure on a semiconductor wafer, thereby reducing the thickness of the semiconductor device. CONSTITUTION: A semiconductor chip(10) comprises a semiconductor substrate(11), a passivation film(13), an insulating film(14), and a sealing layer(16). An opening part(15) is formed on a region which is overlapped with an inner terminal(12) among the insulating film or the passivation film. An inner wire(20) is formed on the insulating film. The inner wire is connected to an outer terminal(26). A multilayer wiring structure(30) comprises wiring patterns(31-34) and insulating layers(41-44). |
